參數(shù)資料
型號： RFF70N06
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET
中文描述： 25 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 78K
代理商： RFF70N06
4-443
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFF70N06
60
60
±
20
25 (Note 2)
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 4) (Figure 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Refer to Peak Current Curve
Refer to UIS Curve
100
0.80
-55 to 150
W
W/
o
C
o
C
260
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
2. Current is limited by the package capability.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS,
V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
GS
=
±
20V, T
C
= 125
o
C
I
D
= 25A, V
GS
= 10V
V
DD
= 30V, I
D
≈
25A, R
L
= 1.2
,
V
GS
= 10V, R
GS
= 2.35
(Figures 13, 16, 17)
60
-
-
V
Gate Threshold Voltage
2.0
3.0
4.5
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
μΑ
Drain to Source On Resistance (Note 3)
-
-
0.025
Turn-On Time
-
-
240
ns
Turn-On Delay Time
-
25
70
ns
Rise Time
-
70
170
ns
Turn-Off Delay Time
-
60
150
ns
Fall Time
-
25
65
ns
Turn-Off Time
-
-
215
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
V
DD
= 30V, I
D
= 25A,
R
L
= 1.2
I
G(REF)
= 1.0mA
(Figures 18, 19)
-
-
260
nC
Gate Charge at 10V
-
-
145
nC
Threshold Gate Charge
-
-
7
nC
Input Capacitance
-
3100
-
pF
Output Capacitance
-
900
-
pF
Reverse Transfer Capacitance
-
300
-
pF
Thermal Resistance Junction to Case
-
-
1.25
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
48
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 25A
-
1.1
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 25A, dI
SD
/dt = 100A/
μ
s
-
190
300
ns
NOTES:
3. Pulse test: pulse width
≤
300ms, duty cycle
≤
2%.
4. Repetitive rating: pulse width is limited by maximum junction temperature. See Transient Thermal Impedance curve Figure 3).
RFF70N06
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