參數(shù)資料
型號(hào): RFF70N06
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET
中文描述: 25 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 78K
代理商: RFF70N06
4-448
PSPICE Electrical Model
SUBCKT RFF70N06 2 1 3 ;
rev 5/29/95
CA 12 8 5.20e-9
CB 15 14 5.20e-9
CIN 6 8 2.80e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 68.7
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRESH 6 21 19 8 1
EZTEMPCO 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.04e-9
LSOURCE 3 7 2.24e-9
MOS1 16 6 8 8 MSTRONG M = 0.99
MOS2 16 21 8 8 MWEAK M = 0.01
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 8.03e-3
RGATE 9 20 1
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 60.4
RLSOURCE 3 7 22.4
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 7.20e-3
RTHRESH 22 8 RTHRESMOD 1
RZTEMPCO 18 19 RZTEMPCOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*250),3))}
.MODEL DBDMOD D (IS = 1e-12 RS = 11.01e-3 TRS1 = 1.75e-3 TRS2 = -0.06e-6 CJO = 2.70e-9 TT = 7.82e-8 M = 0.45)
.MODEL DBREAKMOD D (RS = 88e-3 TRS1 = 1.50e-3 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 2.60e-9 IS = 1e-30 N = 10 M=0.7)
.MODEL MSTRONG NMOS (VTO = 3.85 KP = 47.2 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL MWEAK NMOS (VTO = 3.09 KP = 47.2 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL RBREAKMOD RES (TC1 = 1e-3 TC2 = 0)
.MODEL RDRAINMOD RES (TC1 = 7e-3 TC2 = 1.90e-5)
.MODEL RDSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RSCLMOD RES (TC1 = 0 TC2 = 0)
.MODEL RTHRESHMOD RES (TC1 = -3.10e-3 TC2 = -1e-5)
.MODEL RZTEMPCOMOD RES (TC1 = -2.25e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.0 VOFF= -4.0)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.0 VOFF= -6.0)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.0 VOFF= 2.0)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.0 VOFF= -2.0)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE
RGATE
EZTEMPCO
20
18
22
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RZTEMPCO
VBAT
+
IT
EVTHRESH
+
ESG
DPLCAP
6
6
8
10
5
16
21
11
17
18
8
14
5
8
6
8
7
3
17
18
+
+
+
+
9
RLGATE
RLSOURCE
RLDRAIN
19
22
19
8
RTHRESH
RDRAIN
ESCL
RSCL1
51
+
RSCL2
50
5
51
RFF70N06
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