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參數(shù)資料
| 型號： | RFF60P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 88K |
| 代理商： | RFF60P06 |
4-186
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuit and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
G(REF)
V
DD
Q
g(TH)
V
GS
= -2V
Q
g(-10)
V
GS
= -10V
Q
g(TOT)
V
GS
= -20V
V
DS
-V
GS
I
G(REF)
0
0
Data Packages - Intersil Power Transistors
TX and TXV Equivalents
1. TX/TXV Equivalent - Standard Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning
D. Group A
E. Group B
F. Group C
2. TX/TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Assembly Flow Chart
C. Preconditioning
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record Data
- Attributes Data Sheet
- Group A Lot Traveler
- Attributes Data Sheet
- Group B Lot Traveler
- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating Life
Read and Record Data (Subgroup B6)
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for Intermittent
Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
D. Group A
E. Group B
F. Group C
RFF60P06
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