參數(shù)資料
型號： RFF60P06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET
中文描述： 25 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 88K
代理商： RFF60P06
4-182
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFF60P06
-60
-60
±
20
25 (Note 5)
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (RGS = 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Refer to Peak Current Curve
Refer to UIS Curve
125
1.0
-55 to 150
W
W/
o
C
o
C
260
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
,V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 125
o
C
V
GS
=
±
20V, T
C
= 125
o
C
I
D
= 25A, V
GS
= -10V, (Figure 9)
V
DD
= -30V, I
D
= 25A, R
L
= 1.2
, V
GS
= -10V
R
G
= 2.35
(Figures 13, 16, 17)
-60
-
-
V
Gate Threshold Voltage
-2.0
-3.0
-4.5
V
Zero Gate Voltage Drain Current
-
-
-25
μ
A
-
-
-250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-10)
Q
g(TH)
-
-
±
100
μ
A
Drain to Source On Resistance (Note 2)
-
-
0.030
Turn-On Time
-
-
195
ns
Turn-On Delay Time
-
25
70
ns
Rise Time
-
50
125
ns
Turn-Off Delay Time
-
80
200
ns
Fall Time
-
30
75
ns
Turn-Off Time
-
-
275
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DD
= -30V, I
D
= 25A,
R
L
= 1.2
I
G(REF)
= -4.2mA
(Figures 18, 19)
-
-
450
nC
Gate Charge at -10V
-
-
225
nC
Threshold Gate Charge
-
-
15
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
7200
-
pF
Output Capacitance
-
1800
-
pF
Reverse Transfer Capacitance
-
400
-
pF
Thermal Resistance Junction to Case
-
-
1.0
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
48
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -25A
-
-1.1
-1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= -25A, dI
SD
/dt = -100A/
μ
s
-
130
200
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)
4. Current is limited by package capability.
RFF60P06
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