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參數(shù)資料
| 型號： | RFF60P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 88K |
| 代理商： | RFF60P06 |
4-184
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-75
-10
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
If R = 0
-200
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
V
GS
= -20V
-25
-50
-75
-150
V
GS
= -4.5V
-100
-125
I
D
,
PULSE DURATION = 250
μ
s
T
C
= 25
o
C
0
-2
V
GS
, GATE TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
,
0
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
-55
o
C
150
o
C
25
o
C
-25
-50
-100
-75
-125
-150
V
DD
= -15V
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
T
J
, JUNCTION TEMPERATURE (
o
C)
120
160
2.5
N
PULSE DURATION = 250
μ
s, V
GS
= -10V, I
D
= 25A
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
RFF60P06
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