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參數(shù)資料
| 型號(hào)： | RFF60P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 25A⒂, 60V, 0.030 Ohm, P-Channel Power MOSFET |
| 中文描述： | 25 A, 60 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 88K |
| 代理商： | RFF60P06 |
4-183
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
P
T
C
, CASE TEMPERATURE (
o
C)
T
C
, CASE TEMPERATURE (
o
C)
150
100
75
50
25
-10
0
-20
-30
-5
-15
-25
125
I
D
,
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
T
Z
θ
J
,
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
-500
-100
-10
-10
-100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
V
DSS
MAX = -60V
I
D
,
10ms
100
μ
s
1ms
-1
-1
100ms
DC
10
-5
10
-4
10
-3
t, PULSE WIDTH (s)
10
-2
10
-1
10
0
10
1
-10
2
-10
3
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION V
GS
= -10V
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
150
---------------------
–
=
-10
1
T
C
= 25
o
C
RFF60P06
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