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參數(shù)資料
| 型號(hào)： | RFD16N02L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大小： | 74K |
| 代理商： | RFD16N02L |
8
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RFD16N02L, RFD16N02LSM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD16N02LSM | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFD16N03L | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N03LSM | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N05L | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N02LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N03L | 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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