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參數(shù)資料
| 型號(hào)： | RFD16N02L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RFD16N02L |
1
May 1997
Features
16A, 20V
r
DS(ON)
= 0.022
Temperature CompensatingPSPICE Model
Can be Driven Directly from CMOS, NMOS,
and TTL Circuits
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Formerly developmental type TA49243.
Description
The RFD16N02L and RFD16N02LSM are N-Channel power
MOSFETs manufactured using the MegaFET process. This
process, which uses feature sizes approaching those of
LSI circuits, gives optimum utilization of silicon, resulting in
outstanding performance. They were designed for use in
applications such as switching regulators, switching convert-
ers, motor drivers and relay drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate bias in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N02L
TO-251AA
16N02L
RFD16N02LSM
TO-252AA
16N02L
NOTE: When ordering, use the entire part number. Add the suffix
9A, to obtain the TO-252AA variant in tape and reel, e.g.
RFD16N02LSM9A.
D
S
G
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
File Number
4341
RFD16N02L,
RFD16N02LSM
16A, 20V, 0.022 Ohm, N-Channel,
Logic Level, Power MOSFET
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFD16N02LSM | 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFD16N03L | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N03LSM | 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N05L | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD16N02LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD16N03L | 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD16N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD16N03LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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