參數(shù)資料
型號： RFD16N02L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管)
中文描述： 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 74K
代理商： RFD16N02L
2
Absolute Maximum Ratings
T
C
= 25
o
C
RFD16N02L, RFD16N02LSM
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
V
20
V
±
10
V
16
Refer to Peak Current Curve
A
Refer to UIS Curve
90
0.606
W
W/
o
C
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
-55 to 175
260
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
20
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V,
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 16A, V
GS
= 5V
V
DD
= 15V, I
D
16A,
R
L
= 0.93
, V
GS
= 5V,
R
GS
= 5
-
-
0.022
Turn-On Time
t
ON
-
-
120
ns
Turn-On Delay Time
t
d(ON)
-
15
-
ns
Rise Time
t
r
-
95
-
ns
Turn-Off Delay Time
t
d(OFF)
-
25
-
ns
Fall Time
t
f
-
27
-
ns
Turn-Off Time
t
OFF
-
-
80
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V V
DD
16V,
I
D
≈
16A,
R
L
= 1.0
-
50
60
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
30
36
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
1.5
1.8
nC
Input Capacitance
C
ISS
V
DS
= 20V, V
GS
= 0V,
f = 1MHz
-
1300
-
pF
Output Capacitance
C
OSS
-
724
-
pF
Reverse Transfer Capacitance
C
RSS
-
250
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
1.65
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-251 and TO-252
-
-
100
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 16A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 16A, dI
SD
/dt = 100A/
μ
s
-
-
80
ns
RFD16N02L, RFD16N02LSM
相關(guān)PDF資料
PDF描述
RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管)
RFD16N03L 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管)
RFD16N03LSM 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管)
RFD16N05L 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應(yīng)管)
RFD16N05LSM 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N02LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N03L 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N03LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03LSM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
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