參數(shù)資料
型號(hào)： RFD16N02L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述： 16 A, 20 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 5/8頁(yè)
文件大?。?/td> 74K
代理商： RFD16N02L
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
I
D
= 250
μ
A
2500
500
0
C
1500
2000
1000
V
GS
= 0V, f = 1MHz
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
5
0
V
D
,20
15
10
20
(
)
)
---------------------
t, TIME (
μ
s)
80
(
)
)
---------------------
R
L
= 1.25
I
G(REF)
= 0.55mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
5
3.75
2.5
1.25
0
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
RFD16N02L, RFD16N02LSM
相關(guān)PDF資料
PDF描述
RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
RFD16N03L 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N03LSM 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N05L 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
RFD16N05LSM 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs(16A, 50V, 0.047 Ω N 溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD16N02LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs
RFD16N03L 功能描述:MOSFET TO-251 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD16N03LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFD16N03LSM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
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