參數(shù)資料
型號： RFD15P05
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述： 15 A, 50 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 3/8頁
文件大小： 87K
代理商： RFD15P05
4-98
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
-4
-8
0
25
50
75
100
125
150
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-12
-16
175
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
P
DM
t
1
t
2
0.01
0.1
1
2
T
Z
θ
J
N
t
1
, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
1
10
-4
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
100
μ
s
1ms
100ms
DC
10ms
T
C
= 25
o
C
T
J
= MAX RATED
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
D
,
V
GS
= -20V
V
GS
= -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-10
-200
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
---------------------
–
=
T
C
= 25
o
C
RFD15P05, RFD15P05SM, RFP15P05
相關(guān)PDF資料
PDF描述
RFD15P06SM 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管)
RFD15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場效應(yīng)管)
RFD16N02L 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管)
RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET(16A, 20V, 0.022 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管)
RFD16N03L 16A, 30V, 0.025 Ohm, Logic Level,N-Channel Power MOSFETs(16A, 30V, 0.025 Ω, N溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD15P05SM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P05SM9A 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P06 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
RFD15P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFD-1604-2I 制造商:RF Industries 功能描述:RF COAXIAL CABLE MOUNT CONNECTOR
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