參數(shù)資料
型號： RFD15P05
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管)
中文描述： 15 A, 50 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 2/8頁
文件大小： 87K
代理商： RFD15P05
4-97
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD15P05, RFD15P05SM,
RFP15P05
-50
-50
±
20
-15
Refer to Peak Current Curve
Refer to UIS Curve
80
0.533
-55 to 175
UNITS
V
V
V
A
Drain Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage (R
G
= 20K
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
V
DS
= 0.8 x Rated BV
DSS,
T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 15A, V
GS
= -10V (Figure 9)
V
DD
= -25V, I
D
≈
7.5A, R
G
= 12.5
,
R
L
= 3.3
, V
GS
= -10V
(Figures 16, 17)
-50
-
-
V
Gate Threshold Voltage
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
D(ON)
t
R
t
D(OFF)
t
F
t
OFF
Q
G(TOT)
Q
G(-10)
Q
G(TH)
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.150
Turn-On Time
-
-
60
ns
Turn-On Delay Time
-
16
-
ns
Rise Time
-
30
-
ns
Turn-Off Delay Time
-
50
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to -20V
V
GS
= 0V to -10V
V
GS
= 0V to -2V
V
DD
= -40V, I
D
= 15A,
R
L
= 2.67
,
I
G(REF)
= -0.65mA
(Figures 18, 19)
-
-
150
nC
Gate Charge at -10V
-
-
75
nC
Threshold Gate Charge
-
-
3.5
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= -25V, V
GS
= 0V
f = 1MHz (Figure 12)
-
1150
-
pF
Output Capacitance
-
300
-
pF
Reverse Transfer Capacitance
-
56
-
pF
Thermal Resistance Junction to Case
TO-220AB, TO-251AA, TO-252AA
-
-
1.875
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251AA, TO-252AA
-
-
100
TO-220AB
-
-
62.5
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
RR
I
SD
= -15A
I
SD
= -15A, dI
SD
/dt = -100A/
μ
s
-
-
-1.5
V
Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse duration
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFD15P05, RFD15P05SM, RFP15P05
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