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參數(shù)資料
| 型號： | RFD14N05LSM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管) |
| 中文描述： | 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RFD14N05LSM |
6-138
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.1
1
10
10
0.01
50
1
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
If R = 0
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
0
5
10
15
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3.0
4.5
7.5
20
25
I
D
,
V
GS
= 4V
V
GS
= 10V
30
35
6.0
V
GS
= 3V
V
GS
= 2.5V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s, T
C
= 25
o
C
DUTY CYCLE = 0.5% MAX.
0
3.0
4.5
6.0
7.5
1.5
0
5
10
15
20
25
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
30
35
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
DD
= 15V
0
50
100
150
200
2.5
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
3.5
4.0
4.5
r
D
,
5.0
250
I
D
= 28A
I
D
= 7A
I
D
= 3.5A
I
D
= 14A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
)
0
20
0
10
20
30
40
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
50
40
60
80
100
120
140
160
t
d(OFF)
t
r
t
f
t
d(ON)
V
DD
= 25V, I
D
= 14A, R
L
= 3.57
0
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
V
GS
= 10V, I
D
= 14A
RFD14N05L, RFD14N05LSM, RFP14N05L
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFD14N05LSM | 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK |
| RFD14N05LSM | 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 50V/14A/0.100 OHM N-CH LOGIC-LVL |
| RFD14N05LSM_Q | 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05LSM9A | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05LSM9A_S2515 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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