參數資料
型號： RFD14N05LSM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管)
中文描述： 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數： 2/8頁
文件大?。?/td> 74K
代理商： RFD14N05LSM
6-136
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD14N05L, RFD14N05LSM,
RFP14N05L
50
50
±
10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, Figure 13
V
GS
= V
DS
, I
D
= 250
μ
A, Figure12
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
10V
I
D
= 14A, V
GS
= 5V, Figures 9, 11
V
DD
= 25V, I
D
= 7A,
R
L
= 3.57
, V
GS
= 5V,
R
GS
= 0.6
50
-
-
V
Gate Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
μ
A
-
-
50
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.100
Turn-On Time
-
-
60
ns
Turn-On Delay Time
-
13
-
ns
Rise Time
-
24
-
ns
Turn-Off Delay Time
-
42
-
ns
Fall Time
-
16
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
Figure 14
V
DD
= 40V, I
D
= 14A,
R
L
= 2.86
Figures 20, 21
-
-
40
nC
Gate Charge at 5V
-
-
25
nC
Threshold Gate Charge
-
-
1.5
nC
Input Capacitance
-
670
-
pF
Output Capacitance
-
185
-
pF
Reverse Transfer Capacitance
-
50
-
pF
Thermal Resistance Junction to Case
-
-
3.125
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-251 and TO-252
-
-
100
TO-220
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 14A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 14A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFD14N05L, RFD14N05LSM, RFP14N05L
相關PDF資料
PDF描述
RFP14N05L 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應管)
RFD14N05L MULTI DVI DAISY CHAINABLE RECEIVER - CATX
RFP14N05L GLARE SCREEN PLUS FOR CURVED M
RFD14N05LSM TV TO VGA/HDTV VIDEO SCALER
RFD15N06LE 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應管)
相關代理商/技術參數
參數描述
RFD14N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD14N05LSM 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 50V/14A/0.100 OHM N-CH LOGIC-LVL
RFD14N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A_S2515 制造商:Rochester Electronics LLC 功能描述:- Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*