參數(shù)資料
型號： RFD14N05LSM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應(yīng)管)
中文描述： 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 3/8頁
文件大小： 74K
代理商： RFD14N05LSM
6-137
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
8
4
0
25
50
75
100
125
150
12
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
16
175
t, RECTANGULAR PULSE DURATION (s)
10
-3
10
-2
10
-1
10
0
0.01
0.1
1
10
-5
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
2
T
Z
θ
J
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
100
1
100
10
1
I
D
,
DC
100
μ
s
100ms
1ms
10ms
0.5
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
C
= 25
o
C
T
J
= MAX. RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 10V
100
I
D
,
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
200
T
C
= 25
o
C
RFD14N05L, RFD14N05LSM, RFP14N05L
相關(guān)PDF資料
PDF描述
RFP14N05L 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場效應(yīng)管)
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RFD15N06LE 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD14N05LSM 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC D-PAK
RFD14N05LSM 制造商:Fairchild Semiconductor Corporation 功能描述:PWR MOS 50V/14A/0.100 OHM N-CH LOGIC-LVL
RFD14N05LSM_Q 功能描述:MOSFET TO-252AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05LSM9A_S2515 制造商:Rochester Electronics LLC 功能描述:- Bulk
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