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參數(shù)資料
| 型號(hào)： | RFD12N06RLESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | RFD12N06RLESM |
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RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP12N06RLE | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管) |
| RFD14N05L | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD14N05LSM | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFP14N05L | 14A, 50V, 0.100 Ohm, Logic Level,N-Channel Power MOSFETs(14A, 50V, 0.100 Ω, 邏輯電平N 溝道功率MOS場(chǎng)效應(yīng)管) |
| RFD14N05L | MULTI DVI DAISY CHAINABLE RECEIVER - CATX |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD12N06RLESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14LN05SM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
| RFD14N05_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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