參數(shù)資料
型號(hào)： RFD12N06RLESM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述： 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 49K
代理商： RFD12N06RLESM
6-14
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
50
100
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
150
25
75
125
15
10
5
OPERATION IN THIS
AREA MAY BE LIMITED
BY r
DS(ON)
I
D
MAX CONTINUOUS
T
J
= MAX RATED
T
C
= 25
o
C
100
10
1
0.1
I
D
,
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
DC OPERATION
100
10
10.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
Idm
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
If R = 0
t
av
= (L)(I
as
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
av
= (L/R) In ((I
as
x R) / (1.3 RATED BV
DSS
- V
DD
) + 1)
0
1.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
3
4.5
6
7.5
30
20
10
0
I
D
,
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 2V
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5 % MAX
V
DS
= 15V
0
1.5
3
4.5
6
7.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
30
20
10
0
I
D
,
-55
o
C
25
o
C
150
o
C
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
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PDF描述
RFP12N06RLE 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD12N06RLESM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14LN05SM 制造商:Fairchild Semiconductor Corporation 功能描述:
RFD14N05 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD14N05 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK
RFD14N05_NL 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
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