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參數(shù)資料
| 型號： | RFD12N06RLESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場效應(yīng)管) |
| 中文描述： | 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | RFD12N06RLESM |
6-15
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs GATE TO SOURCE VOLTAGE
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
4.0
4.5
5.0
5.5
6.0
6.5
7.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
N
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
O
V
DS
= 15V, I
D
= 12A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
2.5
1.5
1.0
0.5
0
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
100
2.0
150
200
N
O
I
D
= 12A, V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
V
GS
= V
DS
, I
D
= 250
μ
A
-50
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
B
0.6
I
D
= 250
μ
A
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
15
C
25
0
10
20
1500
1000
750
500
250
1250
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
60
45
30
15
0
10
5
0
V
G
,
V
D
,
DRAIN SOURCE VOLTAGE
GATE
SOURCE
VOLTAGE
R
L
= 5.0
I
G(REF)
= 0.25mA
V
GS
= 5V
I
G(REF)
I
G(ACT)
20
I
G(REF)
I
G(ACT)
80
t, TIME (
μ
s)
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25BV
DSS
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFD12N06RLESM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14LN05SM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFD14N05 | 功能描述:MOSFET TO-251AA N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFD14N05 | 制造商:Intersil Corporation 功能描述:MOSFET N I-PAK |
| RFD14N05_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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