參數(shù)資料
型號(hào)： RFD12N06RLESM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N溝道,邏輯電平,功率MOS場(chǎng)效應(yīng)管)
中文描述： 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù)： 2/6頁
文件大?。?/td> 49K
代理商： RFD12N06RLESM
6-13
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE
60
60
12
26
-5 to10
40
0.32
Refer to UIS SOA Curve
2
-55 to 150
UNITS
V
V
A
A
V
W
W/
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
kV
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
= -5 to 10V
I
D
= 12A, V
GS
= 5V (Figures 7, 8)
I
D
= 12A, V
GS
= 4V
V
DD
= 30V, I
D
≈
6A, R
L
= 5
,
R
GS
= 6.25
,
V
GS
= 5V, (Figures 15, 16)
60
-
-
V
Gate Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
25
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
-
-
±
10
μ
A
Drain to Source On Resistance (Note 2)
-
-
0.135
-
-
0.160
Turn-On Time
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(5)
Q
g(TH)
R
θ
JC
R
θ
JA
-
-
60
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
20
-
ns
Turn-Off Delay Time
-
24
-
ns
Fall Time
-
12
-
ns
Turn-Off Time
-
-
60
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 48V, I
D
= 12A,
R
L
= 4
,
I
G(REF)
= 0.25mA
(Figures 17, 18)
-
-
40
nC
Gate Charge at 5V
-
-
20
nC
Threshold Gate Charge
-
-
1.5
nC
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Case
-
-
3.125
Thermal Resistance Junction to Ambient
TO-251AA and TO-252AA
-
-
100
TO-220AB
-
-
62
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 12A
-
-
1.2
V
Reverse Recovery Time
t
rr
I
SD
= 12A, dI
SD
/dt = 100A/
μ
s
-
-
200
ns
NOTES:
2. Pulse test: pulse width
≤
300ms, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
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