參數(shù)資料
型號： RF1S45N03L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁數(shù)： 7/7頁
文件大?。?/td> 100K
代理商： RF1S45N03L
7-7
PSPICE Electrical Model
.SUBCKT RFP45N03L 2 1 3 ;
rev 11/22/94
CA 12 8 2.55e-9
CB 15 14 2.64e-9
CIN 6 8 1.45e-9
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 33.3
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.9e-9
LSOURCE 3 7 4.9e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.14e-3
RGATE 9 20 0.89
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 10.31e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.583
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/176,6))}
.MODEL DBDMOD D (IS = 3.61e-13 RS = 5.06e-3 TRS1 = 3.05e-3 TRS2 = 7.57e-6 CJO = 2.16e-9 TT = 2.18e-8)
.MODEL DBKMOD D (RS = 1.66e-1 TRS1 = -2.97e-3 TRS2 = 7.57e-6)
.MODEL DPLCAPMOD D (CJO = 0.96e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 2.313 KP = 53.82 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 8.95e-4 TC2 = -1e-7)
.MODEL RDSMOD RES (TC1 = 3.82e-3 TC2 = 1.17e-5)
.MODEL RSCLMOD RES (TC1 = 2.03e-3 TC2 = 0.45e-5)
.MODEL RVTOMOD RES (TC1 = -2.27e-3 TC2 = -5.75e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.82 VOFF= -2.82)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.82 VOFF= -4.82)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.67 VOFF= 2.33)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.33 VOFF= -2.67)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; written by William J. Hepp and C. Frank Wheatley.
1
GATE
LGATE RGATE
EVTO
+
18
8
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
DBODY
LDRAIN
DRAIN
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
+
IT
VTO
ESG
DPLCAP
6
10
5
16
21
11
8
14
7
3
17
18
19
2
+
+
+
+
20
RDRAIN
ESCL
50
RSCL1
51
RSCL2
+
9
-
-
5
51
-
6
8
5
8
-
-
6
8
EBREAK
+
17
18
-
RFP45N03L, RF1S45N03L, RF1S45N03LSM
相關(guān)PDF資料
PDF描述
RF1S45N03LSM 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
RFP4N05L 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
RFP4N06L 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
RFP4N05 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
RFP4N06 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S45N03LSM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RF1S45N06 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RF1S45N06LE 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RF1S45N06LESM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RF1S45N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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