參數(shù)資料
型號： RF1S45N03L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
中文描述： 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁數(shù)： 2/7頁
文件大?。?/td> 100K
代理商： RF1S45N03L
7-2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP45N03L, RF1S45N03L,
RF1S45N03LSM
30
30
±
10
45
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage R
GS
= 20k
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= Rated BV
DSS
, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
10V
I
D
= 45A, V
GS
= 5V (Figure 11
V
DD
= 15V, I
D
= 45A, R
L
= 0.33
,
V
GS
= 5V, R
GS
= 5
(Figures 15, 18, 19)
30
-
-
V
Gate to Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.022
Turn-On Time
-
-
260
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
160
-
ns
Turn-Off Delay Time
-
20
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
60
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 14)
V
DD
= 24V, I
D
= 45A,
R
L
= 0.533
I
G(REF)
= 0.6mA
(Figures 20, 21)
-
50
60
nC
Gate Charge at 5V
-
30
36
nC
Threshold Gate Charge
-
1.5
1.8
nC
Input Capacitance
-
1650
-
pF
Output Capacitance
-
575
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance Junction-to-Case
-
-
1.65
o
C/W
o
C/W
Thermal Resistance Junction-to-Ambient
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFP45N03L, RF1S45N03L, RF1S45N03LSM
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