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參數(shù)資料
| 型號： | RF1S45N03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | RF1S45N03L |
7-5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
I
D
= 250
μ
A
2500
500
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
1500
C
ISS
C
OSS
C
RSS
2000
1000
V
GS
= 0V, f = 0.1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
24
18
12
6
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
5
3
2
1
0
V
DD
= BV
DSS
V
DD
= BV
DSS
V
D
,
V
G
,
R
L
= 0.67
I
G(REF)
= 0.6mA
V
GS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
30
4
RFP45N03L, RF1S45N03L, RF1S45N03LSM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S45N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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