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參數(shù)資料
| 型號： | RF1S45N03L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 45 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 100K |
| 代理商： | RF1S45N03L |
7-3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
50
175
30
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
T
10
-3
10
-2
10
-1
10
0
1
10
-5
10
-4
2
0.01
0.1
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
,
DC
100
μ
s
100ms
1ms
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
T
C
= 25
o
C, T
J
= MAX RATED
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,500
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 5V
T
C
= 25
o
C
RFP45N03L, RF1S45N03L, RF1S45N03LSM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S45N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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