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參數(shù)資料
| 型號： | RF1K49154 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
| 中文描述： | 2 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 421K |
| 代理商： | RF1K49154 |
5
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
T
A
= 25
o
C, Unless Otherwise Specified
(Continued)
1.5
1.25
1
0.75
0.5
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
B
I
D
= 250
μ
A
500
400
200
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
300
C
ISS
C
OSS
100
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
60
45
30
15
0
20
(
)
)
---------------------
t, TIME (
μ
s)
80
(
)
)
---------------------
10
7.5
5
2.5
0
V
D
,
V
G
,
V
DD
= BV
DSS
R
L
= 30
I
G(REF)
= 0.26mA
V
GS
= 10V
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RF1K49154
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|---|---|
| RF1K4915496 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO |
| RF1K49156 | 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET |
| RF1K49156 | 874271042 |
| RF1K49157 | 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET |
| RF1K49157 | 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4915496 | 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49156 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915696 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49157 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915796 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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