參數(shù)資料
型號： RF1K49154
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET
中文描述： 2 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 421K
代理商： RF1K49154
2
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
RF1K49154
60
60
±
20
2
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 12)
60
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 11)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
10
μ
A
Drain to Source On Resistance
r
DS(ON)
I
D
= 2A, V
GS
= 10V, (Figures 9, 10)
-
-
0.130
Turn-On Time
t
ON
V
DD
= 30V, I
D
≈
2A,
R
L
= 15
, V
GS
= 10V,
R
GS
= 25
(Figure 14)
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
25
-
ns
Turn-Off Delay Time
t
d(OFF)
-
70
-
ns
Fall Time
t
f
-
35
-
ns
Turn-Off Time
t
OFF
-
-
155
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 48V,
I
D
= 2A,
R
L
= 24
(Figure 14)
-
26
32
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
14
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
0.8
1.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz (Figure 13)
-
340
-
pF
Output Capacitance
C
OSS
-
140
-
pF
Reverse Transfer Capacitance
C
RSS
-
40
-
pF
Thermal Resistance Junction to Ambient
R
θ
JA
Pulse Width = 1s
Device Mounted on FR-4 Material
-
-
62.5
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 2A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
μ
s
-
-
62
ns
RF1K49154
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RF1K4915796 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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