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參數資料
| 型號： | RF1K49154 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
| 中文描述： | 2 A, 60 V, 0.13 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 421K |
| 代理商： | RF1K49154 |
3
Typical Performance Curves
T
A
= 25
o
C, Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
1
0.5
0
25
50
75
100
125
150
2
1.5
I
D
,
T
A
, AMBIENT TEMPERATURE (
o
C)
2.5
t, RECTANGULAR PULSE DURATION (s)
10
-4
10
-2
10
-1
10
0
10
1
0.01
0.1
10
-3
10
2
P
DM
t
1
t
2
Z
θ
J
,
T
SINGLE PULSE
10
-5
10
3
0.001
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
1
5
DUTY CYCLE
DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
200
0.1
10
20
0.1
1
I
D
,
V
DSS (MAX)
= 60V
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10ms
5ms
100
T
J
= MAX RATED
T
A
= 25
o
C
t, PULSE WIDTH (s)
100
10
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
V
GS
= 20V
T
A
= 25
o
C
I
=
I
25
150 - T
A
125
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
RF1K49154
相關PDF資料 |
PDF描述 |
|---|---|
| RF1K4915496 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | SO |
| RF1K49156 | 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET Power MOSFET |
| RF1K49156 | 874271042 |
| RF1K49157 | 6.3A, 30V, 0.030 Ohm, Single N-Channel LittleFET⑩ Power MOSFET |
| RF1K49157 | 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET⑩ Enhancement Mode Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1K4915496 | 功能描述:MOSFET USE 512-FDS9945 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49156 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915696 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49157 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4915796 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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