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參數(shù)資料
| 型號： | RC28F160C3TC90 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PBGA64 |
| 封裝： | BGA-64 |
| 文件頁數(shù)： | 55/72頁 |
| 文件大?。?/td> | 1083K |
| 代理商： | RC28F160C3TC90 |
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Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Order Number: 290645, Revision: 023
59
Figure 20.
Block Erase Flowchart
Start
FULL ERASE STATUS CHECK PROCEDURE
Repeat for subsequent block erasures.
Full Status register check can be done after each block erase
or after a sequence of block erasures.
Write 0xFF after the last operation to enter read array mode.
SR[1,3] must be cleared before the Write State Machine will
allow further erase attempts.
Only the Clear Status Register command clears SR[1, 3, 4, 5].
If an error is detected, clear the Status register before
attempting an erase retry or other error recovery.
No
Suspend
Erase
1
0
1
1,1
1
0
Yes
Suspend
Erase
Loop
0
Write 0x20,
Block Address
Write 0xD0,
Block Address
Read Status
Register
SR[7] =
Full Erase
Status Check
(if desired)
Block Erase
Complete
Read Status
Register
Block Erase
Successful
SR[1] =
Block Locked
Error
BLOCK ERASE PROCEDURE
Bus
Operation
Command
Comments
Write
Block
Erase
Setup
Data = 0x20
Addr = Block to be erased (BA)
Write
Erase
Confirm
Data = 0xD0
Addr = Block to be erased (BA)
Read
None
Status Register data. Toggle CE# or
OE# to update Status register data
Idle
None
Check SR[7]:
1 = WSM ready
0 = WSM busy
Bus
Command
Comments
SR[3] =
V
PP Range
Error
SR[4,5] =
Command
Sequence Error
SR[5] =
Block Erase
Error
Idle
None
Check SR[3]:
1 = V
PP Range Error
Idle
None
Check SR[4,5]:
Both 1 = Command Sequence Error
Idle
None
Check SR[5]:
1 = Block Erase Error
Idle
None
Check SR[1]:
1 = Attempted erase of locked block;
erase aborted.
(Block Erase)
(Erase Confi rm)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RC28F160C3TD70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| RC28F160C3TD70A | 功能描述:IC FLASH 16MBIT 70NS 64BGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| RC28F160C3TD70B | 制造商:Micron Technology Inc 功能描述:16MB, ARMAGOSA EBGA 3.0 |
| RC28F256J3A-110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| RC28F256J3A-115 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
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