參數(shù)資料
型號(hào)： PZTM1101
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:4; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
中文描述： 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC PACKAGE-4
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 31K
代理商： PZTM1101
1996 May 09
3
Philips Semiconductors
Product specification
NPN transistor/Schottky-diode module
PZTM1101
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 10
μ
A; I
E
= 0;
T
amb
=
55 to +150
°
C; note 1
60
V
V
(BR)CES
collector-emitter breakdown voltage open base; I
C
= 1 mA; V
BE
= 0;
T
amb
=
55 to +150
°
C; note 1
open collector; I
E
= 10
μ
A; I
C
= 0;
T
amb
=
55 to +150
°
C; note 1
V
CE
= 20 V; V
BE
= 0
V
CE
= 20 V; V
BE
= 0; T
amb
=
55 to +150
°
C
V
EB
= 6 V; I
C
= 0
V
EB
= 6 V; I
C
= 0; T
amb
=
55 to +150
°
C
note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 3.2 mA
T
amb
=
55 to +150
°
C; note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 3.2 mA
note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
T
amb
=
55 to +150
°
C; note 1
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
V
CE
= 1 V; note 1
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 100 mA
V
CE
= 1 V; T
amb
=
55 to +150
°
C; note 1
I
C
= 10 mA
I
C
= 100 mA
40
V
V
(BR)EBO
emitter-base breakdown voltage
6
V
I
CES
collector-emitter cut-off current
100
50
50
10
nA
μ
A
nA
μ
A
I
EBO
emitter-base cut-off current
V
CEsat
collector-emitter saturation voltage
200
300
mV
mV
V
CEsat
collector-emitter saturation voltage
250
350
mV
mV
V
BEsat
base-emitter saturation voltage
850
950
mV
mV
V
BEsat
base-emitter saturation voltage
300
1000
1100
4
8
mV
mV
pF
pF
MHz
C
ob
C
ib
f
T
h
FE
output capacitance
input capacitance
transition frequency
DC current gain
40
70
100
30
300
h
FE
DC current gain
60
15
500
S
WITCHING TIMES
(see Figs 2 and 3)
t
d
t
r
t
s
t
f
delay time
rise time
storage time
fall time
V
CC
= 5 V
I
C
= 50 mA
V
i
= 0 to 5 V
1
16
110
70
5
31
310
100
ns
ns
ns
ns
相關(guān)PDF資料
PDF描述
PZTM1102 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PZTM1101,135 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZTM1101T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-223
PZTM1102 制造商:NXP Semiconductors 功能描述:
PZTM1102,135 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PZTM1102T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200MA I(C) | SOT-223
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