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參數(shù)資料
| 型號： | PZTM1101 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:4; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 0.2 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 31K |
| 代理商： | PZTM1101 |
1996 May 09
2
Philips Semiconductors
Product specification
NPN transistor/Schottky-diode module
PZTM1101
FEATURES
Low output capacitance
Fast switching time
Integrated Schottky protection
diode.
APPLICATIONS
High-speed switching for industrial
applications.
DESCRIPTION
Combination of an NPN transistor and a Schottky barrier diode in a plastic
SOT223 package. PNP complement: PZTM1102.
PINNING
PIN
DESCRIPTION
1
2
3
4
anode Schottky
base
emitter
collector, cathode Schottky
Fig.1 Simplified outline (SOT223) and symbol.
Marking code:
TM1101.
handbook, halfpage
4
1
1
4
2
3
2
3
MAM236
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
CBO
V
CES
V
EBO
I
C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
V
BE
= 0
open collector
60
40
6
200
V
V
V
mA
Schottky barrier diode
V
R
I
F
I
F(AV)
T
j
continuous reverse voltage
forward current (DC)
average forward current
junction temperature
40
1
1
125
150
V
A
A
°
C
°
C
reverse current applied
forward current applied
Combined device
P
tot
T
amb
T
stg
T
j
total power dissipation
operating ambient temperature
storage temperature
junction temperature
up to T
amb
= 25
°
C
55
55
1.2
+150
+150
150
W
°
C
°
C
°
C
相關(guān)PDF資料 |
PDF描述 |
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| PZTM1102 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; Number of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTM1101,135 | 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTM1101T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-223 |
| PZTM1102 | 制造商:NXP Semiconductors 功能描述: |
| PZTM1102,135 | 功能描述:兩極晶體管 - BJT TRANS/SCHOTTKY MODULE TAPE-13 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTM1102T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 200MA I(C) | SOT-223 |
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