參數(shù)資料
型號： PSMN005-25D
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, DPAK-3
文件頁數(shù)： 6/9頁
文件大?。?/td> 99K
代理商： PSMN005-25D
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN005-25D
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
10
20
30
40
Gate charge, QG (nC)
50
60
70
80
90
100
110
Gate-source voltage, VGS (V)
ID = 75 A
VDD = 15 V
Tj = 25 C
1
0.001
10
100
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
5
10
15
20
25
30
35
40
45
50
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
October 1999
6
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN005-55B N-channel logic level TrenchMOS transistor
PSMN008-75P N-channel enhancement mode field-effect transistor
PSMN009-100W Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
PSS8050 NPN medium power 25 V transistor
PSS8550 PNP medium power 25 V transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN005-25D /T3 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-25D,118 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-30K 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 制造商:NXP Semiconductors 功能描述:MOSFET, N, SO-8
PSMN005-30K /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-30K,518 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*