參數(shù)資料
型號： PSMN004-60P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 8/13頁
文件大?。?/td> 279K
代理商： PSMN004-60P
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 26 April 2002
8 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 75 A; V
DD
= 48 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ah86
0
20
40
60
80
100
I
S
(A)
0.0
0.5
1.0
1.5
V
SD
(V)
T
j
= 25 oC
175 oC
V
GS
= 0 V
03ah88
0
2
4
6
8
10
12
0
50
100
150
200
Q
G
(nC)
V
GS
(V)
I
D
= 75 A
T
j
= 25 oC
V
DD
= 48 V
相關(guān)PDF資料
PDF描述
PSMN005-25D N-channel logic level TrenchMOS transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN004-60P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
PSMN005-25D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN005-25D /T3 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-25D,118 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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