參數資料
型號： PSMN004-60P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 60 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數： 2/13頁
文件大?。?/td> 279K
代理商： PSMN004-60P
Philips Semiconductors
PSMN004-60P/60B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 26 April 2002
2 of 13
9397 750 09156
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
25
°
C
≤
T
j
≤
175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
-
-
-
-
3.1
Max
60
75
230
175
3.6
Unit
V
A
W
°
C
m
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
gate-source voltage
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
Max
60
60
±
20
±
30
Unit
V
V
V
V
t
p
≤
50
μ
s; pulsed;
duty cycle 25%; T
j
≤
150
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
D
drain current (DC)
-
-
-
-
55
55
75
75
400
230
+175
+175
A
A
A
W
°
C
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
= 25
°
C
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
-
-
75
400
A
A
unclamped inductive load;
I
D
= 75 A; t
p
= 0.1 ms; V
DD
= 15 V;
R
GS
= 50
; V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
V
DD
= 15 V; R
GS
= 50
; V
GS
= 10 V;
starting T
j
= 25
°
C
-
500
mJ
I
DS(AL)S
non-repetitive avalanche current
-
75
A
相關PDF資料
PDF描述
PSMN005-25D N-channel logic level TrenchMOS transistor
PSMN005-55B N-channel logic level TrenchMOS transistor
PSMN008-75P N-channel enhancement mode field-effect transistor
PSMN009-100W Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
PSS8050 NPN medium power 25 V transistor
相關代理商/技術參數
參數描述
PSMN004-60P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
PSMN005-25D 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN005-25D /T3 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN005-25D,118 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數量 廠商 批號 封裝
添加更多采購

我的聯系方式

*
*
*