參數(shù)資料
型號： PSMN003-25W
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 100 A, 25 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC, TO-247, 3 PIN
文件頁數(shù)： 7/8頁
文件大?。?/td> 127K
代理商： PSMN003-25W
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN003-25W
MECHANICAL DATA
Fig.16. SOT429; pin 2 connected to mounting base
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT429
TO-247
98-04-07
99-08-04
0
10
20 mm
scale
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
SOT429
E
P
A
A1
β
w
M
b
1
2
3
e
e
b1
b2
c
Q
q
L
Y
R
D
S
L1
(1)
α
UNIT
A1
D
b
E
e
w
S
R
q
Q
P
L
Y
b2
b1
c
L1
(1)
DIMENSIONS (mm are the original dimensions)
A
β
α
mm
17
°
13
°
6
°
4
°
5.3
4.7
1.9
1.7
2.2
1.8
1.2
0.9
3.2
2.8
0.9
0.6
21
20
16
15
5.45
3.7
3.3
2.6
2.4
5.3
7.5
7.1
0.4
15.7
15.3
16
15
4.0
3.6
3.5
3.3
Note
1. Tinning of terminals are uncontrolled within zone L1.
October 1999
7
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN003-30B N-channel enhancement mode field-effect transistor
PSMN003-30P N-channel enhancement mode field-effect transistor
PSMN004-25B N-channel logic level TrenchMOS transistor
PSMN004-25P N-channel logic level TrenchMOS transistor
PSMN004-36B N-channel enhancement mode field-effect transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
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