參數(shù)資料
型號(hào)： PSMN003-25W
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 100 A, 25 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC, TO-247, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 127K
代理商： PSMN003-25W
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN003-25W
FEATURES
SYMBOL
QUICK REFERENCE DATA
V
DSS
= 25 V
’Trench’
technology
Very low on-state resistance
Fast switching
Low thermal resistance
I
D
= 100 A
R
DS(ON)
≤
3.2 m
(V
GS
= 10 V)
R
DS(ON)
≤
3.5 m
(V
GS
= 5 V)
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
SiliconMAX
productsusethelatest
Philips
Trench
achieve
the
lowest
on-state
resistance
package at each voltage rating.
PIN
DESCRIPTION
technology
to
possible
in
1
gate
each
2
drain
Applications:-
d.c. to d.c. converters
switched mode power supplies
3
source
tab
drain
The PSMN003-25W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Continuous gate-source
voltage
V
GSM
Peak pulsed gate-source
voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 175C
T
j
= 25 C to 175C; R
GS
= 20 k
MIN.
-
-
-
MAX.
25
25
±
15
UNIT
V
V
V
T
j
≤
150 C
-
±
20
V
T
mb
= 25 C; V
GS
= 5 V
T
mb
= 100 C; V
GS
= 5 V
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
100
1
100
1
300
300
175
A
A
A
W
C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
- 55
d
g
s
2
3
1
1
Maximum continuous current limited by package.
October 1999
1
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN003-30B N-channel enhancement mode field-effect transistor
PSMN003-30P N-channel enhancement mode field-effect transistor
PSMN004-25B N-channel logic level TrenchMOS transistor
PSMN004-25P N-channel logic level TrenchMOS transistor
PSMN004-36B N-channel enhancement mode field-effect transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
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