參數(shù)資料
型號(hào): PSMN003-25W
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel logic level TrenchMOS transistor
中文描述: 100 A, 25 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: PLASTIC, TO-247, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 127K
代理商: PSMN003-25W
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN003-25W
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
100
A
-
-
300
A
I
F
= 25 A; V
GS
= 0 V
I
F
= 75 A; V
GS
= 0 V
I
F
= 20 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 20 V
-
-
0.85
1.0
1.2
-
V
t
rr
Q
rr
Reverse recovery time
Reverse recovery charge
-
-
250
1.5
-
-
ns
μ
C
October 1999
3
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN003-30B N-channel enhancement mode field-effect transistor
PSMN003-30P N-channel enhancement mode field-effect transistor
PSMN004-25B N-channel logic level TrenchMOS transistor
PSMN004-25P N-channel logic level TrenchMOS transistor
PSMN004-36B N-channel enhancement mode field-effect transistor
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PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK