參數(shù)資料
型號： PSMN002-25P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁數(shù)： 6/13頁
文件大?。?/td> 288K
代理商： PSMN002-25P
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 22 October 2001
6 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03af39
0
50
100
150
200
250
300
350
400
450
0
0.5
1
1.5
2
2.5
V
DS
(V)
I
D
(A)
2.4 V
2.6 V
T
j
= 25 oC
15 V
V
GS
= 2.2 V
2.8 V
5 V
10 V
3 V
3.4 V
3.6 V
4 V
3.2 V
03af41
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
175 oC
T
j
= 25 oC
03af40
0
0.001
0.002
0.003
0.004
0.005
(
0.007
R
DSon
)
0
100
200
300
400
500
I
D
(A)
T
j
= 25 oC
3.4 V
3.6 V
4 V
5 V
10 V
V
GS
= 15 V
2.4 V 2.6 V 2.8 V 3 V 3.2 V
03af18
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(oC)
a
a
R
DSon 25 C
)
----------------------------
=
相關(guān)PDF資料
PDF描述
PSMN003-25W N-channel logic level TrenchMOS transistor
PSMN003-30B N-channel enhancement mode field-effect transistor
PSMN003-30P N-channel enhancement mode field-effect transistor
PSMN004-25B N-channel logic level TrenchMOS transistor
PSMN004-25P N-channel logic level TrenchMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN002-25P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-25W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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