參數(shù)資料
型號(hào): PSMN002-25P
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 11/13頁(yè)
文件大?。?/td> 288K
代理商: PSMN002-25P
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 22 October 2001
11 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Rev Date
01
Revision history
CPCN
20011022
Description
Product Data; Initial Version
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN002-25P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-25W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube