參數(shù)資料
型號: PSMN002-25P
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 25 V, 0.0029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 3/13頁
文件大?。?/td> 288K
代理商: PSMN002-25P
Philips Semiconductors
PSMN002-25 series
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 22 October 2001
3 of 13
9397 750 08315
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
o
C)
P
der
(%)
03af36
0
20
40
60
80
100
120
0
30
60
90
120
150
180
T
mb
(oC)
I
der
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
°
)
-------------------
100
%
×
=
03af38
1
10
102
103
1
10
102
V
DS
(V)
I
D
(A)
DC
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10μs
100 μs
tp
tp
T
T
P
t
δ
=
相關(guān)PDF資料
PDF描述
PSMN003-25W N-channel logic level TrenchMOS transistor
PSMN003-30B N-channel enhancement mode field-effect transistor
PSMN003-30P N-channel enhancement mode field-effect transistor
PSMN004-25B N-channel logic level TrenchMOS transistor
PSMN004-25P N-channel logic level TrenchMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN002-25P,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-25W 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel logic level TrenchMOS transistor
PSMN003-25W,127 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN003-30B 制造商:NXP Semiconductors 功能描述:MOSFET N D2-PAK
PSMN003-30B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube