參數(shù)資料
型號： PSD813F4
英文描述： Flash In System Programmable Mirocomputer Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲器，256K位EEPROM，16K位SRAM)
中文描述： Flash在系統(tǒng)可編程Mirocomputer外設（閃速，在系統(tǒng)可編程微控制器外圍器件，100萬位閃速存儲器，256K位的EEPROM，16K的位的SRAM）
文件頁數(shù)： 127/130頁
文件大小： 650K
代理商： PSD813F4
Preliminary
PSD813F Family
123
Discrepancy
–
Anytime the MCU changes the state of SDP mode from disabled to
enabled, it must write three command bytes (AAh, 55h, A0h), then write a single dummy
byte to a reserved address space of 128 bytes in length. The dummy byte can be any
pattern. The MCU should not use method 1 or method 2 shown above to enable SDP
mode.
This is only necessary when going from SDP mode disabled to SDP mode enabled.
If SDP mode is already enabled (enabled from the MCU or a stand-alone device
programmer), then the command sequences in Table 9 of the data sheets may be used
to write byte(s) into the EEPROM (no dummy write to reserved space is needed). If the
MCU disables SDP mode, then enables SDP mode again, a dummy write to the
reserved address space is needed to get SDP mode enabled again.
Interim Solution
–
Reserve an address range 128 bytes in length within an unused portion of EEPROM.
This 128-byte space can be in any of the four EEPROM segments, and must begin on a
128-byte address boundary.
To enable SDP mode (only after previously being disabled), the MCU must write the
command sequence AAh, 55h, A0h to any valid EEPROM sector at addresses X555h,
XAAAh, X555h respectively. But then it must write a single dummy byte to the first
location within the reserved 128-byte address space. Example (you don
’
t have to use
these exact addresses or dummy byte value):
AAh >> 8555h
55h >> 8AAAh
A0h >> 8555h
EEh >> 8080h
Just like data PSD813F sheet so far.
Dummy byte EEh is written to reserved address block starting
at 8080h (block is from 8080h to 80FFh).
From this point forward, SDP mode is enabled, until disabled by the MCU or a device
programmer.
If you cannot locate 128 bytes of unused space in your EEPROM memory map, then
you can use populated EEPROM memory. However, you must first read the existing
128 bytes in the reserved space, enable SDP mode with the single dummy write, then
write the original 128 bytes back into the reserved address space.
Temporary
Exceptions to
Specifications
(cont.)
相關PDF資料
PDF描述
PSD813F Flash In-System-Programmable Microcontroller Peripherals(閃速，在系統(tǒng)可編程微控制器外圍器件，1M位閃速存儲器，256K位EEPROM，16K位SRAM)
PSD813FH(中文) Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN(中文) Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FN Field Programmble Microcontroller Peripherals(帶閃存的現(xiàn)場可編程微控制器)
PSD813FH Field Programmble Microcontroller Peripherals With Flash Memory(帶閃存的現(xiàn)場可編程微控制器)
相關代理商/技術參數(shù)
參數(shù)描述
PSD813F4-15J 制造商:WSI 功能描述:
PSD813F4-15JI 制造商:WSI 功能描述:
PSD813F4A-90J 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2A-90J RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD813F4A-90M 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2A-90M RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
PSD813F4VA-15J 功能描述:SPLD - 簡單可編程邏輯器件 U 511-PSD813F2VA-15J RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池數(shù)量:10 最大工作頻率:66 MHz 延遲時間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風格:Through Hole 封裝 / 箱體:DIP-24
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