參數(shù)資料
型號(hào)： PSD813F3V
英文描述： 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; Similar to IRHLUB7970Z4 with optional Total Dose Rating of 300kRads
中文描述： Flash在系統(tǒng)編程（ISP）外設(shè)的8位微控制器
文件頁(yè)數(shù)： 93/103頁(yè)
文件大小： 1185K
代理商： PSD813F3V
93/103
PSD81XFX, PSD83XF2, PSD85XF2
Figure 46. Reset (RESET) Timing
Table 64. Reset (RESET) Timing (5V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in READ Mode.
Table 65. Reset (RESET) Timing (3V devices)
Note: 1. Reset (RESET) does not reset Flash memory Program or Erase cycles.
2. Warm reset aborts Flash memory Program or Erase cycles, and puts the device in READ Mode.
Table 66. V
STBYON
Timing (5V devices)
Symbol
Note: 1. V
STBYON
timing is measured at V
CC
ramp rate of 2 ms.
Table 67. V
STBYON
Timing (3V devices)
Symbol
Note: 1. V
STBYON
timing is measured at V
CC
ramp rate of 2 ms.
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
150
ns
t
NLNH–PO
Power On Reset Active Low Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
120
ns
Symbol
Parameter
Conditions
Min
Max
Unit
t
NLNH
RESET Active Low Time
1
300
ns
t
NLNH–PO
Power On Reset Active Low Time
1
ms
t
NLNH–A
Warm Reset (on the PSD834Fx)
2
25
μ
s
t
OPR
RESET High to Operational Device
300
ns
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μs
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μs
Parameter
Conditions
Min
Typ
Max
Unit
t
BVBH
V
STBY
Detection to V
STBYON
Output High
(Note
1
)
20
μs
t
BXBL
V
STBY
Off Detection to V
STBYON
Output
Low
(Note
1
)
20
μs
tNLNH-PO
Power-On Reset
tOPR
AI02866b
RESET
tNLNH
tNLNH-A
Warm Reset
tOPR
V
CC
V
CC
(min)
相關(guān)PDF資料
PDF描述
PSD813F4V -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597260 with Standard Packaging
PSD813F5V -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9064 with optional Total Dose Rating of 300kRads
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSD813F3V-12 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable (ISP) Peripherals for 8-bit MCUs, 5V
PSD813F3V-12J 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JIT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
PSD813F3V-12JT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Flash In-System Programmable ISP Peripherals For 8-bit MCUs
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