參數(shù)資料
型號(hào): PSD813F3V
英文描述: 60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a UB Surface Mount package; Similar to IRHLUB7970Z4 with optional Total Dose Rating of 300kRads
中文描述: Flash在系統(tǒng)編程(ISP)外設(shè)的8位微控制器
文件頁數(shù): 67/103頁
文件大?。?/td> 1185K
代理商: PSD813F3V
67/103
PSD81XFX, PSD83XF2, PSD85XF2
AC/DC PARAMETERS
These tables describe the AD and DC parameters
of the PSD8XXFX:
J
DC Electrical Specification
J
AC Timing Specification
I
PLD Timing
– Combinatorial Timing
– Synchronous Clock Mode
– Asynchronous Clock Mode
– Input Macrocell Timing
I
MCU Timing
– READ Timing
– WRITE Timing
– Peripheral Mode Timing
– Power-down and Reset Timing
The following are issues concerning the parame-
ters presented:
I
In the DC specification the supply current is
given for different modes of operation. Before
calculating the total power consumption,
determine the percentage of time that the
PSD8XXFX is in each mode. Also, the supply
power is considerably different if the Turbo bit is
0.
I
The AC power component gives the PLD, Flash
memory, and SRAM mA/MHz specification.
Figure 32 and Figure 33 show the PLD mA/MHz
as a function of the number of Product Terms
(PT) used.
I
In the PLD timing parameters, add the required
delay when Turbo bit is 0.
Figure 32. PLD I
CC
/Frequency Consumption (5 V range)
0
10
20
30
40
60
70
80
90
100
110
V
CC
= 5V
TURBO ON (100%)
50
0
10
15
5
20
25
HIGHEST COMPOSITE FREQUENCY AT PLD INPUTS (MHz)
I
C
TURBO ON (25%)
TURBOOFF
TURBO OFF
PT 100%
PT 25%
AI02894
相關(guān)PDF資料
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PSD813F4V -200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; A IRHNA597260 with Standard Packaging
PSD813F5V -60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package; Similar to IRHNA9064 with optional Total Dose Rating of 300kRads
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