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參數(shù)資料
| 型號： | PMWD22XN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual N-channel uTrenchMOS extremely low level FET |
| 中文描述： | 9.2 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 79K |
| 代理商： | PMWD22XN |
9397 750 15093
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
9 of 12
Philips Semiconductors
PMWD22XN
Dual N-channel
μ
TrenchMOS extremely low level FET
7.
Package outline
Fig 14. Package outline SOT530-1 (TSSOP8)
UNIT
A1
A
max.
A2
A3
bp
L
HE
Lp
w
y
v
c
e
D
(1)
E
(2)
Z
(1)
θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.15
0.05
0.95
0.85
0.30
0.19
0.20
0.13
3.1
2.9
4.5
4.3
0.65
6.5
6.3
0.70
0.35
8
°
0
°
0.1
0.1
0.1
0.94
DIMENSIONS (mm are the original dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
0.7
0.5
SOT530-1
MO-153
00-02-24
03-02-18
w
M
bp
D
Z
e
0.25
1
4
8
5
θ
A
A2
A1
Lp
(A3)
detail X
L
HE
E
c
v
M
A
X
A
y
2.5
5 mm
0
scale
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 4.4 mm
SOT530-1
1.1
pin 1 index
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