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參數(shù)資料
| 型號： | PMWD22XN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual N-channel uTrenchMOS extremely low level FET |
| 中文描述： | 9.2 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大小： | 79K |
| 代理商： | PMWD22XN |
Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 15 August 2005
Document number: 9397 750 15093
Published in The Netherlands
Philips Semiconductors
PMWD22XN
Dual N-channel
TrenchMOS extremely low level FET
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information . . . . . . . . . . . . . . . . . . . . 11
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| PMZ760SN | uTrenchMOS (tm) standard level FET |
| PN101F | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| PN102F | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
| PN102 | Silicon planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 制造商:NXP Semiconductors 功能描述:MOSFET, N, TSSOP-8 |
| PMWD26UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PMWD26UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN | 制造商:NXP Semiconductors 功能描述:MOSFET N TSSOP-8 |
| PMWD30UN,518 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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