參數(shù)資料
型號(hào)： PMWD18UN
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： CAT6 SOL PC GRE PLE 15FT PLENUM SOLID PATCH CORD
中文描述： 10600 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153
封裝： PLASTIC, TSSOP-8
文件頁數(shù)： 5/12頁
文件大?。?/td> 92K
代理商： PMWD18UN
Philips Semiconductors
PMWD18UN
Dual N-channel
μ
TrenchMOS ultra low level FET
Product data
Rev. 02 — 23 February 2004
5 of 12
9397 750 12706
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS;
Figure 9
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
10 V; V
DS
= 0 V
V
GS
= 4.5 V; I
D
= 5 A;
Figure 7
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 1.8 V; I
D
= 4.5 A;
Figure 7
and
8
V
GS
= 2.5 V; I
D
= 5 A;
Figure 7
and
8
30
27
0.45
-
-
0.7
-
-
-
V
V
V
V
GS(th)
I
DSS
gate-source threshold voltage
drain-source leakage current
-
-
-
-
-
-
1
100
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate-source leakage current
drain-source on-state resistance
-
-
-
-
18
31
24
20
21.5
37
35
23.5
m
m
m
m
Dynamic characteristics
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 5 A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 4 A; V
DD
= 16 V; V
GS
= 4.5 V;
Figure 13
-
-
-
-
-
-
-
-
-
-
24.7
2.2
6.4
1526 -
210
160
15
21
57
26
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz;
Figure 11
-
-
-
-
-
-
V
DD
= 10 V; I
D
= 1 A; V
GS
= 4.5 V; R
G
= 6
-
-
-
0.87
55
21
1.2
-
-
V
ns
nC
I
S
= 5 A; dI
S
/dt =
100 A/
μ
s; V
R
= 30 V;
V
GS
= 0 V
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