參數(shù)資料
型號(hào): PIP3221-DC
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Dual channel high-side TOPFET
中文描述: 12 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO7
封裝: SOT-427, D2PAK
文件頁(yè)數(shù): 9/16頁(yè)
文件大小: 105K
代理商: PIP3221-DC
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET
Product data
Rev. 01 — 20 February 2004
9 of 16
9397 750 12361
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
V
BG
= 13 V; V
IG
= 5 V; T
j
= 25
°
C
Fig 6.
Status current as a function of status-ground
voltage; typical values.
V
BG
= 16 V; V
IG
= 5 V; T
mb
= 25
°
C
Fig 7.
Self-limiting load current as a function of
battery-load voltage; typical values.
5.5 V
V
BG
35 V
Fig 8.
Input-ground threshold voltage as a function of
junction temperature.
V
BG
= 35 V
Fig 9.
Battery quiescent current as a function of
junction temperature; typical values.
03pa94
0
1
2
3
4
5
0
1
2
3
VSG (V)
IS
(mA)
03pa93
0
4
8
12
16
0
4
8
12
16
VBL (V)
IL(lim)
(A)
03pa98
1
1.5
2
2.5
3
3.5
-50
0
50
100
150
200
Tj (
°
C)
VIG(th)
(V)
max
min
VIG(off)
VIG(on)
03pa97
0
2
4
6
-50
0
50
100
150
200
Tj (
°
C)
IB
(
μ
A)
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