參數(shù)資料
型號: PIP3221-DC
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Dual channel high-side TOPFET
中文描述: 12 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO7
封裝: SOT-427, D2PAK
文件頁數(shù): 8/16頁
文件大?。?/td> 105K
代理商: PIP3221-DC
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET
Product data
Rev. 01 — 20 February 2004
8 of 16
9397 750 12361
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
I
L
= 4 A; V
IG
= 5 V
Fig 4.
Battery-load on-state resistance as a function of battery-ground voltage; typical values.
V
IG
= 5 V
Supply current characteristics: operating current as a function of battery-ground voltage for one channel
only; typical values.
Fig 5.
03pa96
0
40
80
120
160
200
0
10
20
30
40
VBG (V)
RBLon
(m
)
T
j
= 150
°
C
T
j
= 25
°
C
T
j
= -40
°
C
03pa95
0
1
2
3
4
0
25
50
75
VBG (V)
IG
(mA)
Tj =
40
°
C
undervoltage
shutdown
Tj = 150
°
C
Tj = 25
°
C
overvoltage
shutdown
clamping
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