參數(shù)資料
型號: PIP3221-DC
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: Dual channel high-side TOPFET
中文描述: 12 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO7
封裝: SOT-427, D2PAK
文件頁數(shù): 7/16頁
文件大小: 105K
代理商: PIP3221-DC
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET
Product data
Rev. 01 — 20 February 2004
7 of 16
9397 750 12361
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This
negative voltage is clamped by the device.
9 V
V
BG
35 V
This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads.
Defined as in ISO10483-1. For comparison purposes only.
This only applies to the R
BLon
per channel. The supply and input voltages for the R
BLon
tests are continuous. The specified pulse
duration is t
p
= 300
μ
s, and refers only to the applied load current.
R
G
is a resistor incorporated internally into the package.
5.5 V
V
BG
35 V
An open circuit load can be detected in the off-state and requires an external pull-up resistor, R
L(oc)
.
See
Table 4 “Truth table”
[10] Overtemperature protection is not active during reverse current operation.
[11] Undervoltage sensor causes each output channel to switch off and reset.
[12] Overvoltage sensor causes each output channel to switch off to protect the load.
[13] After cooling below the reset temperature the channel will resume normal operation.
[14] The status output is an open drain transistor and requires an external pull-up resistor, R
S
, to indicate a logic HIGH.
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
I
L(oc)
load open circuit current
V
LG
= 3.5 V; per channel
V
LG
= 16 V; per channel
V
S
= 5 V; connected externally;
per channel;
Figure 10
-
-
-
22
200
10
40
300
-
μ
A
μ
A
k
R
L(oc)
open circuit load resistor
Undervoltage
[9]
V
BG(uv)
V
BG(uv)(hys)
battery-ground undervoltage
hysteresis
Overvoltage
[9]
V
BG(ov)
battery-ground overvoltage
V
BG(ov)(hys)
battery-ground overvoltage hysteresis
I
G(ov)
overvoltage operating current
Overload protection
I
L(lim)
self-limiting load current
Overtemperature protection
[9][10]
T
j(th)
threshold junction temperature
T
j(th)(hys)
threshold junction temperature
hysteresis
Status
[9]
V
SG(CL)
status-ground clamping voltage
V
SG(L)
status-ground low voltage
battery-ground undervoltage
[11]
2
-
4.2
0.5
5.3
1.5
V
V
[12]
35
0.2
-
40
1
1
45
2
2.5
V
V
mA
V
BG
= 45 V; per channel
V
BG
8 V; V
BL
= V
BG;
Figure 7
8
12
16
A
[13]
150
3
170
10
190
20
°
C
°
C
I
S
= 100
μ
A
I
S
= 100
μ
A;
Figure 6
I
S
= 250
μ
A
V
SG
= 5 V
T
mb
= 150
°
C
T
mb
= 25
°
C
V
SG
= 5 V; connected externally;
Figure 10
5.5
-
-
7
0.7
-
8.5
0.9
1.1
V
V
V
I
S(off)
status leakage current
-
-
-
-
0.1
47
10
1
-
μ
A
μ
A
k
R
S
status resistor
[14]
Table 7:
Limits are valid for
40
°
C
T
mb
+150
°
C and typical values for T
mb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
…continued
Conditions
Min
Typ
Max
Unit
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