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參數(shù)資料
| 型號： | PIP3221-DC |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Dual channel high-side TOPFET |
| 中文描述： | 12 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO7 |
| 封裝： | SOT-427, D2PAK |
| 文件頁數(shù)： | 5/16頁 |
| 文件大?。?/td> | 105K |
| 代理商： | PIP3221-DC |
Philips Semiconductors
PIP3221-DC
Dual channel high-side TOPFET
Product data
Rev. 01 — 20 February 2004
5 of 16
9397 750 12361
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Limiting values
[1]
The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage
shutdown - see
Table 7 “Static characteristics”
for the operating range.
Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load
must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See
Figure 10 “Typical
dynamic response circuit diagram including reverse supply protection and open load detection.”
[2]
7.
Thermal characteristics
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
BG
battery-ground supply voltage
I
L
load current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
T
mb
mounting base temperature
Reverse battery voltage
V
BGR
reverse battery-ground supply voltage
V
BGRR
repetitive reverse battery-ground
supply voltage
Input current
I
I
input current
I
IRM
repetitive peak input current
Status current
I
S
status current
I
SRM
repetitive peak status current
Inductive load clamping
E
BL(CL)S
non-repetitive battery-load clamping
energy
Electrostatic discharge voltage
V
esd
electrostatic discharge voltage
Limiting values
Conditions
Min
-
-
-
55
40
-
Max
45
4
44.6
+175
+150
260
Unit
V
A
W
°
C
°
C
°
C
[1]
T
mb
≤
130
°
C
T
mb
≤
25
°
C
during soldering (
≤
10 s)
R
I
≥
3.3 k
; R
SS
≥
3.3 k
;
Figure 10
[2]
-
-
16
32
V
V
5
50
+5
+50
mA
mA
δ ≤
0.1; t
p
= 300
μ
s
5
50
+5
+50
mA
mA
δ ≤
0.1; t
p
= 300
μ
s
T
j
= 150
°
C prior to turn-off; V
BG
= 13 V;
I
L
= 5 A; (one channel)
Figure 13
-
60
mJ
Human Body Model 1; C = 100 pF;
R = 1.5 k
-
2
kV
Table 6:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
per channel
both channels
mounted on printed circuit board;
minimum footprint
Min
-
-
-
Typ
4
2
50
Max
5.6
2.8
-
Unit
K/W
K/W
K/W
R
th(j-a)
thermal resistance from junction to
ambient
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