參數(shù)資料
型號(hào)： PHX3055E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： PLASTIC, TO-220F, 3 PIN
文件頁數(shù)： 1/8頁
文件大小： 96K
代理商： PHX3055E
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX3055E
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’
technology
Low on-state resistance
Fast switching
Isolated mounting tab
V
DSS
= 55 V
I
D
= 9 A
R
DS(ON)
≤
150 m
(V
GS
= 10 V)
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel
field-effect power transistor in a
plastic envelope with an electrically
isolated mounting tab. The device
uses’
trench
’technologytoachieve
low on-state resistance.
enhancement
mode,
PIN
DESCRIPTION
1
gate
2
drain
3
source
Applications:-
d.c. to d.c. converters
switched mode power supplies
tab
isolated
The PHX3055E is supplied in the
SOT186A
(isolated
conventional leaded package.
TO220AB)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
±
20
9
5.6
36
21
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
d
g
s
1 2 3
case
August 1999
1
Rev 1.000
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