- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382394 > PHX3N60E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號(hào)： | PHX3N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 1.7 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 73K |
| 代理商： | PHX3N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX3N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Isolated package
V
DSS
= 600 V
I
D
= 1.7 A
R
DS(ON)
≤
4.4
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
case
isolated
The PHX3N60E is supplied in the
SOT186A
full
package.
pack,
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
1.7
1.1
11
30
150
UNIT
V
V
V
A
A
A
W
C
T
hs
= 25 C; V
GS
= 10 V
T
hs
= 100 C; V
GS
= 10 V
T
hs
= 25 C
T
hs
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 1.8 A;
t
p
= 0.2 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
139
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 2.8 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
5.5
mJ
I
AS
, I
AR
-
2.8
A
d
g
s
1 2 3
case
1
pulse width and repetition rate limited by T
j
max.
December 1998
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PI4884 | TrenchMOS logic level FET |
| PIP202-12M | DC to DC converter powertrain |
| PIP3105 | KPSE 5C 5#16 PIN PLUG |
| PIP3105-P | Logic level TOPFET |
| PIP3115-B | KPSE 26C 26#20 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX45NQ11T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET |
| PHX45NQ11T,127 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX4N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。